PART |
Description |
Maker |
SPB100N04S2-04 SPP100N04S2-04 |
Low Voltage MOSFETs - TO220/263; 100A; 40V; NL;3.6mohm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
SPP80N04S2L-03 SPB80N04S2L-03 |
Low Voltage MOSFETs - TO220/263; 80A; 40V; LL; 3.4mOhm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
CDBFN140-G CDBFN160-G |
Schottky Barrier Rectifiers Diodes, V-RRM=40V, V-R=40V, I-O=1A Schottky Barrier Rectifiers Diodes, V-RRM=60V, V-R=60V, I-O=1A
|
Comchip Technology
|
IPI03N03LA IPP03N03LA IPB03N03LA |
OptiMOS®2 - Power packages Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 3.0mOhm, 80A, LL OptiMOS 2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
IPD14N03L |
MULTI DVI RECEIVER - FIBER 的OptiMOS降压转换器系 OptiMOS Buck converter series OptiMOS Buck converter series OptiMOS Power MOSFET, 30V, DPAK, RDSon = 13.5mOhm, 30A, LL
|
INFINEON[Infineon Technologies AG]
|
CDBHD1100L-G CDBHD140L-G CDBHD160L-G |
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=1A Bridge Rectifiers, V-RRM=40V, V-DC=40V, I-(AV)=1A Bridge Rectifiers, V-RRM=60V, V-DC=60V, I-(AV)=1A
|
Comchip Technology
|
A223 BSA223SP |
OptiMOS-P Small-Signal-Transistor OptiMOS磷小信号晶体 Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SC-75, Ron = 1.2
|
INFINEON[Infineon Technologies AG]
|
BSD235C |
OptiMOS 2 OptiMOS?P 2 Small Signal Transistor
|
Infineon Technologies AG
|
ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C) TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 3.5AI(丙)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 3A条一c)| TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 10A条一(c)|1 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 8A条一(c)| TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 3A条一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五(巴西)总裁|5A一(c
|
Cypress Semiconductor, Corp. Vicor, Corp. Atmel, Corp. Advanced Analogic Technologies, Inc. EPCOS AG
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IPB09N03LA IPI09N03LA IPP09N03LA |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, D2PAK, RDSon = 8.9mOhm, 50A, LL OptiMOS 2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|